標題: An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxy
作者: Ou, J
Chen, WK
Lin, HC
Pan, YC
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: InGaN;MOVPE;growth efficiency
公開日期: 1-六月-1998
摘要: We carried out a systematic study on the solid incorporation of InGaN under various growth conditions using metalorganic vapor phase epitaxy (MOVPE). The solid distribution of InGaN was found to be very sensitive to the growth temperature, and the TMGa and TMIn flow rates. Experimental results indicated that at low Ga flow rates InGaN growth is essentially governed by thermodynamic factors, whereas at high growth rate the InGaN solid concentration is determined merely by the vapor composition in the gas phase. In regard to the effect of TMIn flow rates on InGaN growth, it was found that once In droplets form on the surface, the In growth efficiency correspondingly decreases significantly; accounting for the low In solid concentration in InGaN at high TMIn flow rates.
URI: http://dx.doi.org/10.1143/JJAP.37.L633
http://hdl.handle.net/11536/32578
ISSN: 
DOI: 10.1143/JJAP.37.L633
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 37
Issue: 6A
起始頁: L633
結束頁: L636
顯示於類別:期刊論文


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