標題: Improving radiation hardness of EEPROM/flash cell by N2O annealing
作者: Huang, TY
Jong, FC
Chao, TS
Lin, HC
Leu, LY
Young, K
Lin, CH
Chiu, KY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1998
摘要: The effects of an N2O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory (EEPROM)/flash cell with a recently-proposed horn-shaped floating gate were studied. We have found that although the cells appear to survive 1 Mrad(Si) Co-60 irradiation without data retention failure, the write/erase cycling endurance was severely impeded after irradiation. Specifically, the write/erase cycling endurance was degraded to 20 K from the pre-irradiation value of 50 K, However, by adding an N2O annealing step after the interpoly oxidation, the after-irradiation write/erase cycling endurance of the resultant cell can be significantly improved to over 45 K, N2O annealing also improves the after-irradiation program and erase efficiencies. The N2O annealing step therefore presents a potential method for enhancing the robustness of the horn-shaped floating-gate EEPROM/flash cells for radiation-hard applications.
URI: http://dx.doi.org/10.1109/55.701435
http://hdl.handle.net/11536/32550
ISSN: 0741-3106
DOI: 10.1109/55.701435
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 7
起始頁: 256
結束頁: 258
顯示於類別:期刊論文


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  1. 000074366900015.pdf