標題: Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
作者: Lin, W
Kang, TK
Perng, YC
Dai, BT
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: leakage current;plasma density;ion energy;antenna structure;charging damage
公開日期: 1-Jul-1998
摘要: The etching parameters of aluminum in the helicon wave plasma are characterized to elucidate the mechanism of charging damage. By increasing the ion energy and decreasing the plasma density via increase of the bias power and decrease of the source power, respectively, we can significantly reduce charging damage, On the basis of this concept, we develop a two-step etching technique to suppress the charging damage without selectivity loss. Such a high-density plasma etching technique will be very suitable for the formation of high-density, and narrow-line interconnects.
URI: http://hdl.handle.net/11536/32525
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 37
Issue: 7
起始頁: 3867
結束頁: 3870
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