標題: Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
作者: Wang, TH
Chang, TE
Chiang, LP
Wang, CH
Zous, NK
Huang, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GIDL;hot carrier;oxide trap;transient
公開日期: 1-Jul-1998
摘要: We proposed a new measurement technique to investigate oxide charge trapping and detrapping in a hot carrier stressed n-MOSFET by measuring a GIDL current transient. This measurement technique is based on the concept that in a MOSFET the Si surface field and thus GIDL current vary with oxide trapped charge. By monitoring the temporal evolution of GIDL current, the oxide charge trapping/detrapping characteristics can be obtained. An analytical model accounting for the time-dependence of an oxide charge detrapping induced GIDL current transient was derived, A specially designed measurement consisting of oxide trap creation, oxide trap filling with electrons or holes and oxide charge detrapping was performed. Two hot carrier stress methods, channel hot electron injection and band-to-band tunneling induced hot hole injection, were employed in this work, Both electron detrapping and hole detrapping induced GIDL current transients were observed in the same device. The time-dependence of the transients indicates that oxide charge detrapping is mainly achieved via field enhanced tunneling. In addition, we used this technique to characterize oxide trap growth in the two hot carrier stress conditions. The result reveals that the hot hole stress is about 10(4) times more efficient in trap generation than the hot electron stress in terms of injected charge.
URI: http://dx.doi.org/10.1109/16.701482
http://hdl.handle.net/11536/32522
ISSN: 0018-9383
DOI: 10.1109/16.701482
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 45
Issue: 7
起始頁: 1511
結束頁: 1517
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