標題: The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stress
作者: Chang, KM
Li, CH
Wang, SW
Yeh, TH
Yang, JY
Lee, TC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Fowler-Nordheim tunneling;gate oxide;positive charges;stress
公開日期: 1-八月-1998
摘要: In this study, new relaxation phenomena of positive charges in gate oxide with Fowler-Nordheim (FN) constant current injections have been investigated and characterized. It was found that the magnitudes of applied gate voltage shifts (Delta V-FN) during FN injections, after positive charges relaxed or discharged, have a logarithmic dependence with the relaxation time for both injection polarities, The results can derive the relationship of transient discharging currents, that flow through the oxides after removal of the stress voltage, with the relaxation time. We have shown that the current has a lit dependence for both injection polarities which can be also derived from the tunneling front model. The effects of oxide fields (lower than the necessary voltage for FN tunneling) and wafer temperatures (373 and 423 K) for the relaxation of positive charges are also studied.
URI: http://dx.doi.org/10.1109/16.704365
http://hdl.handle.net/11536/32488
ISSN: 0018-9383
DOI: 10.1109/16.704365
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 45
Issue: 8
起始頁: 1684
結束頁: 1689
顯示於類別:期刊論文


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