標題: Preparation and electronic properties of YBa2Cu3Ox films with controlled oxygen stoichiometries
作者: Wu, KH
Hsieh, MC
Chen, SP
Chao, SC
Juang, JY
Uen, TM
Gou, YS
Tseng, TY
Fu, CM
Chen, JM
Liu, RG
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: oxygen-controlled YBCO films;X-ray absorption spectroscopy;ultrafast relaxation dynamics;carrier-phonon coupling;Fermi level position
公開日期: 1-八月-1998
摘要: We describe a novel technique capable of controlling the oxygen content of YBa2Cu3Ox (YBCO) films in a precise and reversible manner. The temperature dependence of resistivity and the distinct two-plateau behavior in critical temperature T-CO versus oxygen content plot of these films are consistent with those observed in the bulk and single crystals of YBCO. The O 1s and Cu 2p absorption spectra of these films were measured by polarization-dependent X-ray absorption spectroscopy (XAS). The intensity variations of the pre-edge peaks as a function of oxygen content are discussed. We also used these films to systematically study the electron-phonon coupling strength and the position of Fermi level by using a femtosecond pump-probe technique. A clear sign-reversal of the transient reflectivity, which was consistently explained by the thermomodulation model, was observed. Both of these optical measurements support the idea that the electronic structure of YBCO cuprates is based on the charge transfer model with hybridization between the Cu and O sites.
URI: http://hdl.handle.net/11536/32467
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 37
Issue: 8
起始頁: 4346
結束頁: 4355
顯示於類別:期刊論文


文件中的檔案:

  1. 000076313100024.pdf