標題: Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique
作者: Wang, TH
Chiang, LP
Zous, NK
Chang, TE
Huang, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-1998
摘要: An oxide trap characterization technique by measuring a subthreshold current transient is developed, This technique consists of two alternating phases, an oxide charge detrapping phase and a subthreshold current measurement phase. An analytical model relating a subthreshold current transient to oxide charge tunnel detrapping is derived. By taking advantage of a large difference between interface trap and oxide trap time-constants, this transient technique allows the characterization of oxide traps separately in the presence of interface traps, Oxide traps created by three different stress methods, channel Fowler-Nordheim (F-N) stress, hot electron stress and hot hole stress, are characterized, By varying the gate bias in the detrapping phase and the drain bias in the measurement phase, the field dependence of oxide charge detrapping and the spatial distribution of oxide traps in the channel direction can be obtained, Our results show that 1) the subthreshold current transient follows a power-law time-dependence at a small charge detrapping field, 2) while the hot hole stress generated oxide traps have a largest density, their spatial distribution in the channel is narrowest as compared to the other two stresses, and 3) the hot hole stress created oxide charges exhibit a shortest effective detrapping time-constant.
URI: http://dx.doi.org/10.1109/16.704380
http://hdl.handle.net/11536/32463
ISSN: 0018-9383
DOI: 10.1109/16.704380
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 45
Issue: 8
起始頁: 1791
結束頁: 1796
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