標題: Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs
作者: Lin, GR
Chen, WC
Chang, CS
Chao, SC
Wu, KH
Hsu, TM
Lee, WC
Pan, CL
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: arsenic-ion-implanted GaAs;photoconductive switch;ultrafast optoelectronics
公開日期: 1-Sep-1998
摘要: Structural, electrical, and ultrafast optical properties of furnace-annealed arsenic-ion-implanted GaAs (GaAs:As+) has been investigated for its applications in ultrafast optoelectronics, From these studies, we determine that GaAs substrates implanted with 200-keV arsenic ions at 10(16) ions/cm(2) and furnace-annealed at 500 degrees C-600 degrees C would have recovered its crystallinity, be highly resistive, and exhibit picosecond photo-excited carrier lifetimes. The duration of the electrical pulses generated by photoconductive switches (PCS's) fabricated on the optimized material was approximate to 4 ps, The risetime (10%-90%) and 1/e falltime were, respectively, approximate to 2 and 3 ps, These results were measurement-system limited, We estimated the actual response to be approximate to 2 ps, consistent with a photo-excited carrier lifetime of approximate to 1.8 ps. The peak responsivity was greater than or equal to 4x10(-3) A/W. The dark current for the GaAs:As+ PCS biased at 40 V was as low as 5 nA. The break down field was higher than 150 kV/cm, These characteristics are comparable to those of state-of-the-art photoconductors such as LT-GaAs.
URI: http://dx.doi.org/10.1109/3.709591
http://hdl.handle.net/11536/32437
ISSN: 0018-9197
DOI: 10.1109/3.709591
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 34
Issue: 9
起始頁: 1740
結束頁: 1748
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