標題: Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers
作者: Yen, ST
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: doped lasers;quantum well;quantum-well lasers;semiconductor device modeling;semiconductor lasers;spontaneous emission;visible lasers
公開日期: 1-Sep-1998
摘要: We theoretically analyze 630-nm band GaInP-AIGaInP tensile-strained quantum-well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current, As a result, the threshold current is reduced and the emission wavelength is shortened for multiquantum-well (MQW) lasers by n-type doping. But for single-quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping.
URI: http://dx.doi.org/10.1109/3.709580
http://hdl.handle.net/11536/32436
ISSN: 0018-9197
DOI: 10.1109/3.709580
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 34
Issue: 9
起始頁: 1644
結束頁: 1651
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