標題: Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
作者: Chen, WK
Lin, HC
Pan, YC
Ou, J
Shu, CK
Chen, WH
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: Raman scattering;X-ray;InN;MOVPE
公開日期: 1-九月-1998
摘要: We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.
URI: http://dx.doi.org/10.1143/JJAP.37.4870
http://hdl.handle.net/11536/32434
ISSN: 0021-4922
DOI: 10.1143/JJAP.37.4870
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 37
Issue: 9A
起始頁: 4870
結束頁: 4871
顯示於類別:期刊論文


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  1. 000076313200041.pdf