標題: Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon Nanocrystals
作者: Chiang, Tsung-Yu
Wu, Yi-Hong
Ma, William Cheng-Yu
Kuo, Po-Yi
Wang, Kuan-Ti
Liao, Chia-Chun
Yeh, Chi-Ruei
Yang, Wen-Luh
Chao, Tien-Sheng
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: In situ;memory window;nonvolatile memory;retention time;silicon nanocrystal (Si-NC)
公開日期: 1-Aug-2010
摘要: In this paper, silicon-oxide-nitride-oxide-semiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: V(g) = 6 V, V(d) = 7 V and V(g) = -7 V, V(d) = 10 V, respectively), greater tolerable gate and drain disturbance (V(t) shift < 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10 mu s with a 2-V shift of V(t) under V(g) = V(d) = 6 V operation), good retention time (> 10(8) s for 13% charge loss), and excellent endurance performance (after 10(4) P/E cycles with a memory window of 3 V).
URI: http://dx.doi.org/10.1109/TED.2010.2051489
http://hdl.handle.net/11536/32337
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2051489
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 8
起始頁: 1895
結束頁: 1902
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