標題: Growth of 3C-SiC on Si(111) using the four-step non-cooling process
作者: Liu, Jui-Min
Chen, Wei-Yu
Hwang, J.
Huang, C-F.
Wang, Wei-Lin
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Silicon carbide;Low pressure chemical vapor deposition;X-ray diffraction;Crystal microstructure
公開日期: 2-Aug-2010
摘要: A modified four-step method was applied to grow a 3C-SiC thin film of high quality on the off-axis 1.5 degrees Si(111) substrate in a mixed gas of C(3)H(8), SiH(4) and H(2) using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional threestep method (clean, carburization, and growth). The X-ray intensity of the 3C-SiC(111) peak is enhanced from 5 x 10(4) counts/s (the modified three steps) to 1.1 x 10(5) counts/s (the modified four steps). The better crystal quality of 3C-SiC is confirmed by the X-ray rocking curves of 3C-SiC(111). 3C-SiC is epitaxially grown on Si( 111) supported by the selected area electron diffraction patterns taken at the 3C-SiC/Si(111) interface. Some (111) stacking faults and twins appear inside the 3C-SiC, which may result from the stress induced in the 3C-SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si-C bonds and in reducing the void density at the 3C-SiC/Si(111) interface. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.05.055
http://hdl.handle.net/11536/32313
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.05.055
期刊: THIN SOLID FILMS
Volume: 518
Issue: 20
起始頁: 5700
結束頁: 5703
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