標題: Carrier dynamics of Mg-doped indium nitride
作者: Ahn, H.
Yu, K. -J.
Hong, Y. -L.
Gwo, S.
光電工程學系
Department of Photonics
關鍵字: carrier lifetime;electron density;high-speed optical techniques;indium compounds;magnesium;semiconductor thin films;terahertz waves;time resolved spectroscopy;wide band gap semiconductors
公開日期: 9-八月-2010
摘要: Recently, we have reported a significant enhancement (>500 times in intensity) in terahertz emission from Mg-doped indium nitride (InN:Mg) films compared to undoped InN. It was found that the intensity of terahertz radiation strongly depends on the background electron density. In this letter, we present the results on ultrafast time-resolved reflectivity measurement employed to investigate the carrier dynamics of InN:Mg. We find that the decay time constant of InN:Mg depends on background electron density in the same way as terahertz radiation does. The spatial redistribution of carriers in diffusion and drift is found to be responsible for the recombination behavior as well as terahertz radiation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479523]
URI: http://dx.doi.org/10.1063/1.3479523
http://hdl.handle.net/11536/32304
ISSN: 0003-6951
DOI: 10.1063/1.3479523
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 6
結束頁: 
顯示於類別:期刊論文


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  1. 000280940900040.pdf