Full metadata record
DC FieldValueLanguage
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorWu, Tzeng-Tsongen_US
dc.contributor.authorTu, Po-Minen_US
dc.contributor.authorChen, Chien-Kangen_US
dc.contributor.authorChen, Cheng-Hungen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:48:28Z-
dc.date.available2014-12-08T15:48:28Z-
dc.date.issued2010-08-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3483133en_US
dc.identifier.urihttp://hdl.handle.net/11536/32291-
dc.description.abstractWe report the demonstration of the continuous wave laser action on GaN-based vertical cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair Ta(2)O(5)/SiO(2) distributed Bragg reflector (DBR), a 7 lambda-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/GaN DBR. The laser has a threshold current of about 9.7 mA corresponding to the current density of about 12.4 kA/cm(2) and a turn-on voltage about 4.3 V at 300 K. The lasing wavelength was 412 nm with a linewidth of about 0.5 nm. A spontaneous emission coupling efficiency factor of about 5x10(-3) and the degree of polarization of about 55% were measured, respectively. The laser beam has a narrow divergence angle of about 8 degrees. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483133]en_US
dc.language.isoen_USen_US
dc.subjectaluminium compoundsen_US
dc.subjectdistributed Bragg reflector lasersen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectindium compoundsen_US
dc.subjectlaser beamsen_US
dc.subjectlaser cavity resonatorsen_US
dc.subjectquantum well lasersen_US
dc.subjectspontaneous emissionen_US
dc.subjectsurface emitting lasersen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleContinuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3483133en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000281153600014-
dc.citation.woscount33-
Appears in Collections:Articles