標題: Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
作者: Lu, Tien-Chang
Chen, Shih-Wei
Wu, Tzeng-Tsong
Tu, Po-Min
Chen, Chien-Kang
Chen, Cheng-Hung
Li, Zhen-Yu
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: aluminium compounds;distributed Bragg reflector lasers;gallium compounds;III-V semiconductors;indium compounds;laser beams;laser cavity resonators;quantum well lasers;spontaneous emission;surface emitting lasers;wide band gap semiconductors
公開日期: 16-Aug-2010
摘要: We report the demonstration of the continuous wave laser action on GaN-based vertical cavity surface emitting lasers at room temperature. The laser structure consists of a ten-pair Ta(2)O(5)/SiO(2) distributed Bragg reflector (DBR), a 7 lambda-thick optical cavity, ten-pairs InGaN/GaN multiquantum wells with an AlGaN electron blocking layer, and a 29-pair AlN/GaN DBR. The laser has a threshold current of about 9.7 mA corresponding to the current density of about 12.4 kA/cm(2) and a turn-on voltage about 4.3 V at 300 K. The lasing wavelength was 412 nm with a linewidth of about 0.5 nm. A spontaneous emission coupling efficiency factor of about 5x10(-3) and the degree of polarization of about 55% were measured, respectively. The laser beam has a narrow divergence angle of about 8 degrees. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483133]
URI: http://dx.doi.org/10.1063/1.3483133
http://hdl.handle.net/11536/32291
ISSN: 0003-6951
DOI: 10.1063/1.3483133
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 7
結束頁: 
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