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dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChou, Yi-Tehen_US
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorFuh, Chur-Shyangen_US
dc.date.accessioned2014-12-08T15:48:27Z-
dc.date.available2014-12-08T15:48:27Z-
dc.date.issued2010-08-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3483616en_US
dc.identifier.urihttp://hdl.handle.net/11536/32284-
dc.description.abstractAmbipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm(2)/V s and hole mobility of 0.15 cm(2)/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483616]en_US
dc.language.isoen_USen_US
dc.subjectannealingen_US
dc.subjectelectron mobilityen_US
dc.subjectgallium compoundsen_US
dc.subjecthole mobilityen_US
dc.subjectindium compoundsen_US
dc.subjectinvertorsen_US
dc.subjectMIS devicesen_US
dc.subjectorganic compoundsen_US
dc.subjectorganic-inorganic hybrid materialsen_US
dc.subjectsemiconductor materialsen_US
dc.subjectsemiconductor-insulator boundariesen_US
dc.subjectthin film transistorsen_US
dc.subjectzinc compoundsen_US
dc.titleHigh-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3483616en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume97en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000281306500069-
dc.citation.woscount8-
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