標題: High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
作者: Liu, Po-Tsun
Chou, Yi-Teh
Teng, Li-Feng
Fuh, Chur-Shyang
光電工程學系
Department of Photonics
關鍵字: annealing;electron mobility;gallium compounds;hole mobility;indium compounds;invertors;MIS devices;organic compounds;organic-inorganic hybrid materials;semiconductor materials;semiconductor-insulator boundaries;thin film transistors;zinc compounds
公開日期: 23-Aug-2010
摘要: Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm(2)/V s and hole mobility of 0.15 cm(2)/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483616]
URI: http://dx.doi.org/10.1063/1.3483616
http://hdl.handle.net/11536/32284
ISSN: 0003-6951
DOI: 10.1063/1.3483616
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 8
結束頁: 
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