|標題:||High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors|
Department of Photonics
|關鍵字:||annealing;electron mobility;gallium compounds;hole mobility;indium compounds;invertors;MIS devices;organic compounds;organic-inorganic hybrid materials;semiconductor materials;semiconductor-insulator boundaries;thin film transistors;zinc compounds|
|摘要:||Ambipolar thin film transistors (TFTs) with InGaZnO/pentacene heterostructure channels are demonstrated for a high-voltage-gain complementary metal oxide semiconductor (CMOS) inverter. The ambipolar TFT exhibits a electron mobility of 23.8 cm(2)/V s and hole mobility of 0.15 cm(2)/V s for the InGaZnO and pentacene, respectively. The thermal annealing process was also studied to adjust electron concentration reducing operating voltage of the CMOS inverter. The voltage gain achieves as high as 60 obtained in the first and third quadrants of the voltage transfer characteristic. The high performance and simple manufacture of the heterostructure CMOS inverter show promise as critical components in various electrical applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483616]|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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