標題: Nonequilibrium occupation number and charge susceptibility of a resonance level close to a dissipative quantum phase transition
作者: Chung, Chung-Hou
Latha, K. V. P.
電子物理學系
Department of Electrophysics
公開日期: 30-Aug-2010
摘要: Based on the recent paper [Phys. Rev. Lett. 102, 216803 (2009)], we study the nonequilibrium occupation number n(d) and charge susceptibility chi of a resonance level close to dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a delocalized phase for weak dissipation and a localized phase for strong dissipation. The resonance level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic bosonic bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. Within the nonequilibrium renormalization-group approach, we calculate nonequilibrium magnetization M and spin susceptibility chi in the effective Kondo model, corresponding to 2n(d)-1 and chi of a resonance level, respectively. We demonstrate the smearing of the KT transition in the nonequilibrium magnetization M as a function of the effective anisotropic Kondo couplings, in contrast to a perfect jump in M at the transition in equilibrium. In the limit of large bias voltages, we find M and chi at the KT transition and in the localized phase show deviations from the equilibrium Curie-law behavior. As the system gets deeper in the localized phase, both n(d)-1/2 and chi decrease more rapidly to zero with increasing bias voltages.
URI: http://dx.doi.org/10.1103/PhysRevB.82.085120
http://hdl.handle.net/11536/32278
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.82.085120
期刊: PHYSICAL REVIEW B
Volume: 82
Issue: 8
起始頁: 0
結束頁: 0
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