標題: Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer
作者: Chen, J. F.
Chen, Ross C. C.
Chiang, C. H.
Chen, Y. F.
Wu, Y. H.
Chang, L.
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 30-八月-2010
摘要: Capping InAs quantum dots (QDs) with an InGaAs layer allows strain relaxation to induce a low-energy electron state below a set of fine dot family states, which is consistent with photoluminescence (PL) spectra. The evolution of InAs thickness suggests a bimodal onset relaxation, i.e., a fine dot family that is strain-relieved by indium outdiffusion from the QDs, as suggested by transmission electron microscopy, and a low-energy dot family that is strain relaxed by the generation of lattice misfits. The indium outdiffusion can explain an abnormal PL blueshift in 70 meV in the fine dot family at onset of strain relaxation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3483757]
URI: http://dx.doi.org/10.1063/1.3483757
http://hdl.handle.net/11536/32277
ISSN: 0003-6951
DOI: 10.1063/1.3483757
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 9
結束頁: 
顯示於類別:期刊論文


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