標題: Measurement of electromigration activation energy in eutectic SnPb and SnAg flip-chip solder joints with Cu and Ni under-bump metallization
作者: Chen, Hsiao-Yun
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Sep-2010
摘要: Electromigration activation energy is measured by a built-in sensor that detects the real temperature during current stressing. Activation energy can be accurately determined by calibrating the temperature using the temperature coefficient of resistivity of an Al trace. The activation energies for eutectic SnAg and SnPb solder bumps are measured on Cu under-bump metallization (UBM) as 1.06 and 0.87 eV, respectively. The activation energy mainly depends on the formation of Cu-Sn intermetallic compounds. On the other hand, the activation energy for eutectic SnAg solder bumps with Cu-Ni UBM is measured as 0.84 eV, which is mainly related to void formation in the solder.
URI: http://dx.doi.org/10.1557/jmr.2010.0230
http://hdl.handle.net/11536/32254
ISSN: 0884-2914
DOI: 10.1557/jmr.2010.0230
期刊: JOURNAL OF MATERIALS RESEARCH
Volume: 25
Issue: 9
起始頁: 1847
結束頁: 1853
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