標題: The ballistic transport and reliability of the SOI and strained-SOI nMOSFETs with 65nm node and beyond technology
作者: Hsieh, E. R.
Chang, Derrick W.
Chung, S. S.
Lin, Y. H.
Tsai, C. H.
Tsai, C. T.
Ma, G. H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: In this paper, the device performance in terms of its transport charactertitics and reliability of the MOS devices on the SOI and strained-SOI have been examined. For the first time, both the transport and reliability characteristics have been established from. experimental SOI and SSOI nMOSFETs. It was characterized by two parameters, the ballistic efficiency and the injection velocity. Experimental verifications on rMOSFETs with both technologies with tensile-stress enhancement have been made. For SSOI devices, it shows the expected drain current enhancements. For the reliability evaluations, SOI shows a smaller lattice such that it exhibits a much worse hot carrier (HC) reliability, while SSOI device shows a poorer interface quality verified from the FN-stress experiment. In general, although SSOI exhibits a worse interface quality while its reliability is much better than that of SOI's. Moreover, SSOI device shows a very high injection velocity as a result of the high strain of the device which makes it successful for drain current enhancement.
URI: http://hdl.handle.net/11536/32253
http://dx.doi.org/10.1109/VTSA.2008.4530826
ISBN: 978-1-4244-1614-1
DOI: 10.1109/VTSA.2008.4530826
期刊: 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM
起始頁: 120
結束頁: 121
Appears in Collections:Conferences Paper


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