標題: An Extreme Surface Proximity Push for Embedded SiGe in pMOSFETs Featuring Self-Aligned Silicon Reflow
作者: Lin, Da-Wen
Chen, Chien-Liang
Chen, Ming-Jer
Wu, Chung-Cheng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Embedded silicon-germanium (e-SiGe);MOSFET;reflow;self-aligned;strain
公開日期: 1-九月-2010
摘要: This letter proposes a novel process to modulate the distance, or proximity, between the tip of embedded silicon-germanium (e-SiGe) and the channel region in pMOSFETs. Traditionally, sophisticated etching treatment is adopted in a spacer structure; however, process-induced variation in the e-SiGe proximity may lead to serious variation in pMOSFET performance. In this letter, an extremely close proximity is achieved using self-aligned silicon reflow (SASR) in hydrogen ambient. As opposed to conventional approaches which have e-SiGe proximity determined by spacer width, the tip of e-SiGe with SASR can be positioned flush with the gate edge, as corroborated by both the TEM analyses and TCAD simulation. A significant improvement in pMOSFET performance is also measured.
URI: http://dx.doi.org/10.1109/LED.2010.2056350
http://hdl.handle.net/11536/32244
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2056350
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 9
起始頁: 924
結束頁: 926
顯示於類別:期刊論文


文件中的檔案:

  1. 000283185500008.pdf