標題: GATE AND DRAIN CURRENTS IN OFF-STATE BURIED-TYPE P-CHANNEL LDD MOSFETS
作者: CHEN, MJ
CHAO, KC
HUANG, TH
TSAUR, JM
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-十二月-1992
摘要: The buried-type p-channel LDD MOSFET's biased at high positive gate voltage exhibit new characteristics: 1) the ratio of the drain to gate currents is about 1 X 10(-3) to 5 X 10(-3); and 2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n+ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n+ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, not only the oxide field but also the gate and drain currents are independent of drain voltage.
URI: http://dx.doi.org/10.1109/55.192875
http://hdl.handle.net/11536/3224
ISSN: 0741-3106
DOI: 10.1109/55.192875
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 13
Issue: 12
起始頁: 654
結束頁: 657
顯示於類別:期刊論文


文件中的檔案:

  1. A1992JZ43700020.pdf