標題: High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in NOR-Type Flash Memory
作者: Wang, Kuan-Ti
Chao, Tien-Sheng
Wu, Woei-Cherng
Yang, Wen-Luh
Lee, Chien-Hsing
Hsieh, Tsung-Min
Liou, Jhyy-Cheng
Wang, Shen-De
Chen, Tzu-Ping
Chen, Chien-Hung
Lin, Chih-Hung
Chen, Hwi-Huang
電子物理學系
Department of Electrophysics
關鍵字: Flash memory;multilevel states in a cell (MLC);NOR;silicon-oxide-nitride-oxide-silicon (SONOS)
公開日期: 1-Sep-2010
摘要: For the first time, a high-performance (tau(PGM) = 200 ns/tau(ERS) = 5 ms) cell with superior reliability characteristics is demonstrated in a NOR-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multilevel and 2-bit/cell operation. Using DTSSI enables easy extraction of the multilevel states with a tight V(TH) distribution, a nearly negligible second-bit effect, superior endurance characteristics, and good data retention.
URI: http://dx.doi.org/10.1109/TED.2010.2054530
http://hdl.handle.net/11536/32226
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2054530
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 9
起始頁: 2335
結束頁: 2338
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