標題: Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
作者: Wang, Sheng-Chun
Su, Pin
Chen, Kun-Ming
Liao, Kuo-Hsiang
Chen, Bo-Yuan
Huang, Sheng-Yi
Hung, Cheng-Chou
Huang, Guo-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Body resistance;dynamic threshold voltage (DT) MOSFETs;noise;RF;silicon-on-insulator (SOI);small signal;temperature dependence
公開日期: 1-Sep-2010
摘要: In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R(b)) would contribute to the output noise current, and degrade the minimum noise figure (NF(min)). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.
URI: http://dx.doi.org/10.1109/TMTT.2010.2057175
http://hdl.handle.net/11536/32223
ISSN: 0018-9480
DOI: 10.1109/TMTT.2010.2057175
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 58
Issue: 9
起始頁: 2319
結束頁: 2325
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