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dc.contributor.authorLee, Ya-Juen_US
dc.contributor.authorChen, Yi-Chingen_US
dc.contributor.authorLee, Chia-Jungen_US
dc.contributor.authorCheng, Chun-Maoen_US
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:48:20Z-
dc.date.available2014-12-08T15:48:20Z-
dc.date.issued2010-09-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2010.2053530en_US
dc.identifier.urihttp://hdl.handle.net/11536/32205-
dc.description.abstractWe present experimental results on the improved performance and high stable temperature characteristics of the InGaN green light-emitting diode (LED) with pre-trimethlyindium (pre-TMIn) flow treatment. By using pre-TMIn flow treatment, a relatively large radiative coefficient (B = 3.34 x 10(-11) cm(3).s(-1))corresponding to a 9.2% enhancement in the internal quantum efficiency, as well as a significant reduction of leakage paths for injected carriers, was obtained. Most important, the pre-TMIn flow treatment evidently reduces the dependence of the external quantum efficiency on temperature and efficiency droop of green LEDs. The improvement is thought to be attributable to the preferential formation of In-rich dots upon pre-TMIn flow treatment, which effectively suppresses the trapping of excitons by threading dislocations and the overflowing of injected carriers outside the active regions at elevated temperatures.en_US
dc.language.isoen_USen_US
dc.subjectEfficiency-droopen_US
dc.subjectlight-emitting diodeen_US
dc.titleStable Temperature Characteristics and Suppression of Efficiency Droop in InGaN Green Light-Emitting Diodes Using Pre-TMIn Flow Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2010.2053530en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume22en_US
dc.citation.issue17en_US
dc.citation.spage1279en_US
dc.citation.epage1281en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287963500005-
dc.citation.woscount5-
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