標題: Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells
作者: Li, J. C.
Lu, T. C.
Huang, H. M.
Chan, W. W.
Kuo, H. C.
Wang, S. C.
光電工程學系
Department of Photonics
關鍵字: gallium compounds;III-V semiconductors;indium compounds;nanofabrication;nanorods;self-assembly;semiconductor growth;semiconductor quantum wells;wide band gap semiconductors
公開日期: 15-九月-2010
摘要: Nonpolar (a-plane) GaN nanorod arrays with embedded In(x)Ga(1-x)N/GaN (x=0.09, 0.14, 0.24, and 0.30) multiple quantum wells (MQWs) grown on r-plane sapphire have been fabricated successfully by self-assembled Ni nanomasks and subsequent inductively coupled plasma reactive-ion etching. After nanorod fabrications, the polarization ratio of the emission from MQWs with lower indium composition (x=0.09 and 0.14) slightly decreases but apparently increases by at most 79% for the samples with higher indium composition (x=0.24 and 0.30). Competition between the effect of multiple scattering, strain relaxation and reduction in localized centers, expected in a-plane MQW samples, are attributed to the variations in the polarization ratios after the nanorod formation. (c) 2010 American Institute of Physics. [doi:10.1063/1.3483239]
URI: http://dx.doi.org/10.1063/1.3483239
http://hdl.handle.net/11536/32191
ISSN: 0021-8979
DOI: 10.1063/1.3483239
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 108
Issue: 6
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