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dc.contributor.authorWu, W. W.en_US
dc.contributor.authorLu, K. C.en_US
dc.contributor.authorWang, C. W.en_US
dc.contributor.authorHsieh, H. Y.en_US
dc.contributor.authorChen, S. Y.en_US
dc.contributor.authorChou, Y. C.en_US
dc.contributor.authorYu, S. Y.en_US
dc.contributor.authorChen, L. J.en_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:48:15Z-
dc.date.available2014-12-08T15:48:15Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl101842wen_US
dc.identifier.urihttp://hdl.handle.net/11536/32166-
dc.description.abstractForming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale Here, we report efficient and unique methods, point and line contact reactions on Si nanowtres, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NISI and Si with very sharp interfaces were produced in a Si nanowire Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NISI grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni acorns within a Si nanowire. The growth of NISI stops as the amount of Ni in the Ni nanodots is consumed Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si. we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices Unlike the point contact reaction, suicide growth starts at the contact area in the line contact reaction, the different silicide formation modes resulting from point and line contact reactions are compared and analyzed A mechanism on the basis of flux divergence is proposed for controlling the growth of the nanomultiheterostructuresen_US
dc.language.isoen_USen_US
dc.subjectSilicide nanowiresen_US
dc.subjectpoint contact reactionsen_US
dc.subjectin situ TEMen_US
dc.subjectmultiple nanoheterostructuresen_US
dc.subjectnanodotsen_US
dc.subjectnanopatternsen_US
dc.titleGrowth of Multiple Metal/Semiconductor Nanoheterostructures through Point and Line Contact Reactionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl101842wen_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue10en_US
dc.citation.spage3984en_US
dc.citation.epage3989en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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