Full metadata record
DC FieldValueLanguage
dc.contributor.authorLo, Shun-Tsungen_US
dc.contributor.authorChen, Kuang Yaoen_US
dc.contributor.authorLin, T. L.en_US
dc.contributor.authorLin, Li-Hungen_US
dc.contributor.authorLuo, Dong-Shengen_US
dc.contributor.authorOchiai, Y.en_US
dc.contributor.authorAoki, N.en_US
dc.contributor.authorWang, Yi-Tingen_US
dc.contributor.authorPeng, Zai Fongen_US
dc.contributor.authorLin, Yipingen_US
dc.contributor.authorChen, J. C.en_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorHuang, C. F.en_US
dc.contributor.authorLiang, C. -T.en_US
dc.date.accessioned2014-12-08T15:48:15Z-
dc.date.available2014-12-08T15:48:15Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2010.07.040en_US
dc.identifier.urihttp://hdl.handle.net/11536/32159-
dc.description.abstractWe have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSemiconductoren_US
dc.subjectEpitaxyen_US
dc.subjectElectron-electron interactionsen_US
dc.subjectQuantum Hall effecten_US
dc.titleProbing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transitionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ssc.2010.07.040en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume150en_US
dc.citation.issue39-40en_US
dc.citation.spage1902en_US
dc.citation.epage1905en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles


Files in This Item:

  1. 000282157000010.pdf