標題: Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition
作者: Lo, Shun-Tsung
Chen, Kuang Yao
Lin, T. L.
Lin, Li-Hung
Luo, Dong-Sheng
Ochiai, Y.
Aoki, N.
Wang, Yi-Ting
Peng, Zai Fong
Lin, Yiping
Chen, J. C.
Lin, Sheng-Di
Huang, C. F.
Liang, C. -T.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Semiconductor;Epitaxy;Electron-electron interactions;Quantum Hall effect
公開日期: 1-Oct-2010
摘要: We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.ssc.2010.07.040
http://hdl.handle.net/11536/32159
ISSN: 0038-1098
DOI: 10.1016/j.ssc.2010.07.040
期刊: SOLID STATE COMMUNICATIONS
Volume: 150
Issue: 39-40
起始頁: 1902
結束頁: 1905
Appears in Collections:Articles


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