|標題:||Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition|
Chen, Kuang Yao
Lin, T. L.
Peng, Zai Fong
Chen, J. C.
Huang, C. F.
Liang, C. -T.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Semiconductor;Epitaxy;Electron-electron interactions;Quantum Hall effect|
|摘要:||We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.|
|期刊:||SOLID STATE COMMUNICATIONS|
|Appears in Collections:||Articles|
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