標題: Low temperature Ni-nanocrystals-assisted hybrid polycrystalline silicon thin film transistor for non-volatile memory applications
作者: Wang, Terry Tai-Jui
Ma, William Cheng-Yu
Hung, Shih-Wei
Kuo, Cheng-Tzu
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Thin film transistor (TFT);Non-volatile memory (NVM);Nickel-nanocrystals (Ni-NCs)
公開日期: 1-Oct-2010
摘要: The nickel-nanocrystals (Ni-NCs)-embedded silicon nitride acting as a trapping layer has been successfully demonstrated to manipulate the charging and discharging of electrons in a thin film transistor (TFT) for nonvolatile memory (NVM) applications. Regarding device performance, with and without Ni-NCs in the stack and under a programming/erasing condition of +/-18 V for 1 s, a better threshold voltage shift of 3.2 V can be reached compared to a shift of 2.0 V for a stack without Ni-NCs. The shift is an index representing the value required to differentiate "0" or "1" states during operation. In this case, the diameter range and number density of Ni-NCs are 5-13 nm and 5.3 x 10(11) cm(-2), respectively. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.05.010
http://hdl.handle.net/11536/32125
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.05.010
期刊: THIN SOLID FILMS
Volume: 518
Issue: 24
起始頁: 7429
結束頁: 7432
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