標題: Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
作者: Chen, Shih-Cheng
Chang, Ting-Chang
Chen, Wei-Ren
Lo, Yuan-Chun
Wu, Kai-Ting
Sze, S. M.
Chen, Jason
Liao, I. H.
Yeh(Huang), Fon-Shan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Nonvolatile;Nanocrystals;Memory;Oxygen;Plasma
公開日期: 1-Oct-2010
摘要: In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.04.107
http://hdl.handle.net/11536/32121
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.04.107
期刊: THIN SOLID FILMS
Volume: 518
Issue: 24
起始頁: 7339
結束頁: 7342
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