標題: Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
作者: Wang, Bau-Ming
Yang, Tzu-Ming
Wu, YewChung Sermon
Su, Chun-Jung
Lin, Horng-Chih
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Nickel-metal induced lateral crystallization (NILC);Nanowire (NW);Ni-gettering;Thin-film transistor (TFT)
公開日期: 1-Nov-2010
摘要: High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO(2) films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.matchemphys.2010.08.018
http://hdl.handle.net/11536/32043
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2010.08.018
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 124
Issue: 1
起始頁: 880
結束頁: 883
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