標題: Investigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodes
作者: Lin, Pei-Hsuan
Chen, Cheng-Pin
Hung, Yen-Jen
Hsu, Shao-Sun
Chen, Liang-Yi
Cheng, Yun-Wei
Ke, Min-Yung
Chiu, Ching Hua
Kuo, Hao-Chung
Huang, Jian Jang
光電工程學系
Department of Photonics
關鍵字: Heterojunction photodiodes;natural lithography;solar cells;transient response
公開日期: 1-Nov-2010
摘要: We investigated the carrier transient response of the nanopatterned silicon heterojunction photodiodes using ZnO as the n-type semiconductor. The results show that under the constant light illumination intensity, the planar structure has faster carrier response than the nanopatterned amorphous silicon (intrinsic) (a-Si(i)) diodes. It is attributed to a higher number of generated carriers in the nanostructure (due to the lower surface reflectivity) that increases the probability of collisions. On the other hand, the shortest response time of the device with nanopatterned p(+)-Si suggests that carriers can be effectively transported vertically and horizontally through the p-i(intrinsic)-n structure. Furthermore, the wavelength-dependent rise time is correlated to the different transport distance between electrons and holes at different excited wavelengths.
URI: http://dx.doi.org/10.1109/LPT.2010.2069557
http://hdl.handle.net/11536/32038
ISSN: 1041-1135
DOI: 10.1109/LPT.2010.2069557
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 21
起始頁: 1589
結束頁: 1591
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