標題: A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon Nanocrystals
作者: Chiang, Tsung-Yu
Ma, William Cheng-Yu
Wu, Yi-Hong
Wang, Kuan-Ti
Chao, Tien-Sheng
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Band-to-band tunneling (BTBT);nonvolatile memory (NVM);p-n diode (PND);silicon nanocrystal (Si-NC);thin-film transistor (TFT)
公開日期: 1-Nov-2010
摘要: In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10(-7) A by the band-to-band tunneling current. A much larger memory window (> 12 V) and good data retention time (> 10(8) s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.
URI: http://dx.doi.org/10.1109/LED.2010.2064153
http://hdl.handle.net/11536/32033
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2064153
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 11
起始頁: 1239
結束頁: 1241
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