標題: Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current Ratio
作者: Wu, Yi-Hong
Kuo, Po-Yi
Lu, Yi-Hsien
Chen, Yi-Hsuan
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Ni-salicided;polycrystalline silicon thin-film transistors (poly-Si TFTs);symmetric S/D;vertical channel
公開日期: 1-Nov-2010
摘要: We have successfully fabricated the symmetric vertical-channel Ni-salicided polycrystalline silicon thin-film transistors (VSA-TFTs) for the first time. The transfer characteristics of VSA-TFTs show a sharp turning between subthreshold and ON state. The OFF-state currents can be improved by a modified overetching of oxide, equivalent dual-gate structure, and n(+) floating-region length. The ON-state currents can be enhanced by Ni-salicidation. The VSA-TFTs display a good subthreshold swing of 220 mV/dec, steep mobility increase (field-effect mobility of 76 cm(2)/ V . s), and large ON/OFF-current ratio of more than 109 (I(OFF) = 4 x 10 (14), I(ON) = 7 x 10 (5), and W(mask)/L(mask) = 10 mu m/3 mu m).
URI: http://dx.doi.org/10.1109/LED.2010.2061215
http://hdl.handle.net/11536/32032
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2061215
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 11
起始頁: 1233
結束頁: 1235
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