標題: In-Plane Gate Transistors Fabricated by Using Atomic Force Microscopy Anode Oxidation
作者: Chung, Tung-Hsun
Chen, Shu-Han
Liao, Wen-Hsuan
Lin, Shih-Yen
光電工程學系
Department of Photonics
關鍵字: Atomic force microscopy (AFM);in-plane gate transistors
公開日期: 1-Nov-2010
摘要: An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this letter. By performing repeated oxidation and deoxidation procedures by using the AFM for four times, two V-shaped trenches are fabricated on the prepatterned mesas to isolate the electrical terminals of the device. Without exposing the channel region to the atmosphere, the device has exhibited standard transistor current-voltage characteristics in the 0-5 V range at room temperature, which may be advantageous for the future high-speed application of the device.
URI: http://dx.doi.org/10.1109/LED.2010.2068273
http://hdl.handle.net/11536/32030
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2068273
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 11
起始頁: 1227
結束頁: 1229
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