標題: Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
作者: Wang, M. C.
Tsao, S. W.
Chang, T. C.
Lin, Y. P.
Liu, Po-Tsun
Chen, J. R.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Photo leakage current;a-Si:H TFTs;Mechanical strain
公開日期: 1-Nov-2010
摘要: The photo leakage current (I(PLC)) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I(PLC) of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E(F)). Experimental results show the I(PLC) of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E(a)) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E(F). (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2010.04.006
http://hdl.handle.net/11536/32000
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.04.006
期刊: SOLID-STATE ELECTRONICS
Volume: 54
Issue: 11
起始頁: 1485
結束頁: 1487
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