Title: Investigation of silicon oxide films prepared by room-temperature ion plating
Authors: Yeh, CF
Chen, TJ
Fan, CL
Kao, JS
Department of Electronics Engineering and Institute of Electronics
Issue Date: 15-Jan-1998
Abstract: To develop excellent silicon oxide film using low temperature method, ion plating (IP) oxide is investigated. Physicochemical characterizations of the IP oxide are studied using ellipsometry, Fourier transform infrared spectrometry, and P-etch rate measurement. The IP oxide is a high-density dielectric with strained bonds. Electrical characterizations are also analyzed using capacitance-voltage and current-voltage techniques through metal-oxide-semiconductor capacitors. The IP oxide has a low leakage current, a high breakdown field, and low interface state density. In addition, IP oxide annealed in N-2 ambient is also studied. After high-temperature annealing, the characteristics of IP oxide become comparable to those of thermal oxide. The novel oxide him is successfully applied as a gate insulator to low-temperature processed (less than or equal to 620 degrees C) polysilicon thin-film transistors. (C) 1998 American Institute of Physics.
URI: http://hdl.handle.net/11536/32
ISSN: 0021-8979
Volume: 83
Issue: 2
Begin Page: 1107
End Page: 1113
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