標題: Al-Cu Pattern Wafer Study on Metal Corrosion Due to Chloride Ion Contaminants
作者: Wu, Bi-Jun
Bai, Hsunling
Lin, I. -Kai
Liu, S. S.
環境工程研究所
Institute of Environmental Engineering
關鍵字: Airborne molecular contaminants (AMCs);chloride contamination;cleanroom microcontamination;HCl;pattern wafer;semiconductor device
公開日期: 1-Nov-2010
摘要: Chloride ions (Cl(-)) in the cleanroom environment induce metal corrosion of integrated circuits, and cause wafer scrap events. In this paper, pattern wafers were designed to monitor critical Cl(-) concentration which leads to metal corrosion effects in a simulated airborne molecular contamination (AMC) environment. The simulated Cl(-) contamination environment was established by placing different numbers of preventive maintenance (PM) wipers in wafer pods and monitored simultaneously by ion mobility spectrometer (IMS) and impinger+ion chromatography (IC) instruments. The exposed Al-Cu pattern wafers were analyzed by the KLA surface scanner and the scanning electron microscope/energy dispersive X-ray spectroscopy analyzer. The results indicate that the IMS and the impinger+IC instruments provide consistent HCl monitoring data. Furthermore, they suggest that pattern wafer exposure tests can be an effective method to monitor metal corrosion. The PM wipers are a simple and effective method to establish simulated source of HCl for studying the AMC effect in ppbv levels. The critical HCl concentration where particles could be found on the wafer surface is around 2.0-3.5 ppbv, and the critical HCl concentration that results in metal corrosion defects is around 4.1-6.4 ppbv.
URI: http://dx.doi.org/10.1109/TSM.2010.2061972
http://hdl.handle.net/11536/31961
ISSN: 0894-6507
DOI: 10.1109/TSM.2010.2061972
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 23
Issue: 4
起始頁: 553
結束頁: 558
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