標題: Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
作者: Wang, C. H.
Chang, S. P.
Chang, W. T.
Li, J. C.
Lu, Y. S.
Li, Z. Y.
Yang, H. C.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 1-Nov-2010
摘要: InGaN/GaN light-emitting diodes (LEDs) with graded-thickness multiple quantum wells (GQW) was designed and grown by metal-organic chemical vapor deposition. The GQW structure, in which the well-thickness increases along [0001] direction, was found to have superior hole distribution as well as radiative recombination distribution by performing simulation modeling. Accordingly, the experimental investigation of electroluminescence spectrum reveals additional emission from the narrower wells within GQWs. Consequently, the efficiency droop can be alleviated to be about 16% from maximum at current density of 30 to 200 A/cm(2), which is much smaller than that for conventional LED (32%). Moreover, the light output power was enhanced from 18.0 to 24.3 mW at 20 A/cm(2). (C) 2010 American Institute of Physics. [doi:10.1063/1.3507891]
URI: http://dx.doi.org/10.1063/1.3507891
http://hdl.handle.net/11536/31956
ISSN: 0003-6951
DOI: 10.1063/1.3507891
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 18
結束頁: 
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