標題: A 10-Gb/s OEIC with Meshed Spatially-Modulated Photo Detector in 0.18-mu m CMOS Technology
作者: Huang, Shih-Hao
Chen, Wei-Zen
Chang, Yu-Wei
Huang, Yang-Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Optical receiver;optoelectronic integrated circuit (OEIC);spatially-modulated photo detector (SMPD);transimpedance amplifier (TIA);limiting amplifier (LA)
公開日期: 1-May-2011
摘要: This paper describes the design of a 10-Gb/s fully integrated CMOS optical receiver, which consists of a novel spatially-modulated photo detector (SMPD), a low-noise trans-impedance amplifier (TIA), and a post-limiting amplifier on a single chip. The bandwidth of proposed meshed SMPD can be boosted up to 6.9 GHz under a reverse-biased voltage of 14.2 V. The measured responsivity of the meshed SMPD is 29 mA/W as illuminated by 850-nm light source. To compensate the relatively low responsivity of on-chip CMOS photo detector (PD), a high-gain TIA with nested feedback and shunt peaking is proposed to achieve low-noise operation. The optical receiver is capable of delivering 25-k Omega conversion gain when driving 50-Omega output loads. For a PRBS test pattern of 2(7)-1, the 10-Gb/s optoelectronic integrated circuit (OEIC) has optical sensitivity of -6 dBm at a bit-error rate (BER) of 10(-11). Implemented in a generic 0.18-mu m CMOS technology, the chip area is 0.95 mm by 0.8 mm. The trans-impedance amplifier, post amplifier, and output buffer respectively drain 38 mW, 80 mW, and 27 mW from the 1.8-V supply.
URI: http://dx.doi.org/10.1109/JSSC.2011.2116430
http://hdl.handle.net/11536/31953
ISSN: 0018-9200
DOI: 10.1109/JSSC.2011.2116430
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 46
Issue: 5
起始頁: 1158
結束頁: 1169
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000289908700015.pdf