標題: Amorphous indium-gallium-zinc-oxide visible-light phototransistor with a polymeric light absorption layer
作者: Zan, Hsiao-Wen
Chen, Wei-Tsung
Hsueh, Hsiu-Wen
Kao, Shih-Chin
Ku, Ming-Che
Tsai, Chuang-Chuang
Meng, Hsin-Fei
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 15-Nov-2010
摘要: This work demonstrates a real-time visible-light phototransistor comprised of a wide-band-gap amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) and a narrow-band-gap polymeric capping layer. The capping layer and the IGZO layer form a p-n junction diode. The p-n junction absorbs visible light and consequently injects electrons into the IGZO layer, which in turn affects the body voltage as well as the threshold voltage of a-IGZO TFT. The hysteresis behavior due to the charges at IGZO back interface is also discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517506]
URI: http://dx.doi.org/10.1063/1.3517506
http://hdl.handle.net/11536/31930
ISSN: 0003-6951
DOI: 10.1063/1.3517506
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 20
起始頁: 
結束頁: 
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