標題: Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties
作者: Wu, W. W.
Lu, K. C.
Chen, K. N.
Yeh, P. H.
Wang, C. W.
Lin, Y. C.
Huang, Yu
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Nov-2010
摘要: Unusually large and compressively strained Si in nanoheterostructures of Ni silicide/Si/Ni silicide, in which the strain of the Si region can be achieved up to 10%, has been produced with point contact reactions between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The growth rate and relationships between the strain and the spacing of the Si region have been measured. Based on the rate and relationships, we can control the Si dimension and, in turn, the strain of remaining Si can be tuned with appropriate spacing. Since one-dimensional nanoheterostructures may have potential applications in nanoelectronic devices, the existent strain will further affect carrier mobility and piezoresistance coefficients in the Si region. Electrical measurements on the nanodevices from such nanoheterostructures show that the current output closely correlates with the Si channel length and compressive strain. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515421]
URI: http://dx.doi.org/10.1063/1.3515421
http://hdl.handle.net/11536/31929
ISSN: 0003-6951
DOI: 10.1063/1.3515421
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 20
結束頁: 
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