標題: Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si
作者: Lee, Ling
Fan, Wen-Chung
Ku, Jui-Tai
Chang, Wen-Hao
Chen, Wei-Kuo
Chou, Wu-Ching
Ko, Chih-Hsin
Wu, Cheng-Hsien
Lin, You-Ru
Wann, Clement H.
Hsu, Chao-Wei
Chen, Yung-Feng
Su, Yan-Kuin
電子物理學系
Department of Electrophysics
公開日期: 19-Nov-2010
摘要: The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranges from 80 to 100 nm, the emission efficiency of GaAs can be enhanced and is stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers is attributed to the trapping of both threading dislocations and planar defects at the trench sidewalls. This approach demonstrates the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.
URI: http://dx.doi.org/10.1088/0957-4484/21/46/465701
http://hdl.handle.net/11536/31921
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/46/465701
期刊: NANOTECHNOLOGY
Volume: 21
Issue: 46
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結束頁: 
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