標題: REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE
作者: LAN, WH
LIN, WJ
TU, SL
YANG, SJ
HUANG, KF
電子物理學系
Department of Electrophysics
關鍵字: PHOTOCHEMICAL VAPOR DEPOSITION;LANGMUIR-HINSHELWOOD THEORY
公開日期: 1-Jan-1993
摘要: The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.
URI: http://dx.doi.org/10.1143/JJAP.32.150
http://hdl.handle.net/11536/3192
ISSN: 0021-4922
DOI: 10.1143/JJAP.32.150
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 32
Issue: 1A
起始頁: 150
結束頁: 154
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