標題: Analysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operation
作者: Chen, Te-Chih
Chang, Ting-Chang
Chen, Shih-Ching
Hsieh, Tien-Yu
Jian, Fu-Yen
Lin, Chia-Sheng
Li, Hung-Wei
Lee, Ming-Hsien
Chen, Jim-Shone
Shih, Ching-Chieh
光電工程學系
Department of Photonics
關鍵字: Hot carriers;nonvolatile memory;thin-film transistors (TFTs)
公開日期: 1-Dec-2010
摘要: This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hot-hole injection, the degradation is mainly affected by the lateral electrical field over a critical point.
URI: http://dx.doi.org/10.1109/LED.2010.2079912
http://hdl.handle.net/11536/31879
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2079912
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 12
起始頁: 1413
結束頁: 1415
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