標題: Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
作者: Chen, Kuei-Ming
Yeh, Yen-Hsien
Wu, Yin-Hao
Chiang, Chen-Hao
Yang, Din-Ru
Chao, Chu-Li
Chi, Tung-Wei
Fang, Yen-Hsang
Tsay, Jenq-Dar
Lee, Wei-I
電子物理學系
Department of Electrophysics
關鍵字: Etching;GaN substrate;Hydride vapor phase epitaxy;Nitrides;GaN
公開日期: 1-Dec-2010
摘要: The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 067 to 0 056 m(-1) (i e the bowing radius increased from 1 5 to 178 m) with increase in inductively coupled plasma (ICP) etching time at the N-polar face and eventually changed the bowing direction from convex to concave Furthermore the Influences of the bowing curvature on the measured full width at half maximum (FWEIM) of high-resolution X-ray diffraction (HRXRD) in (0 0 2) reflection were also deduced which reduced from 176 8 to 888 arcsec with increase in ICP etching time Decrease in the nonhomogeneous distribution of threading dislocations and point defects as well as V(Ga)-O(N) complex defects on removing the GaN layer from N-polar face which removed large amount of defects was one of the reasons that improved the bowing of the free-standing GaN substrate Another reason was the high aspect ratio of needle-like GaN that appeared at the N-polar face after ICP etching which released the compressive strain of the free-standing GaN substrate By doing so crack-free and extremely flat free-standing GaN substrates with a bowing radius of 178 m could be obtained (C) 2010 Elsevier B V All rights reserved
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.09.044
http://hdl.handle.net/11536/31875
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.09.044
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 312
Issue: 24
起始頁: 3574
結束頁: 3578
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