標題: FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS
作者: HSU, SL
LIU, LM
FANG, CH
YING, SL
CHEN, TL
LIN, MS
CHANG, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1993
摘要: Severe field inversion has been observed in the circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the inter-metal dielectrics and PEOX/PECVD nitride as the passivation layer. We have performed detailed studies to conclude that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H+ released from PECVD nitride during the sintering. No field inversion is observed when PEOX/inorganic SOG/PEOX is used as the inter-metal dielectrics. The effect of field inversion on the circuit yield is also discussed.
URI: http://dx.doi.org/10.1109/16.249423
http://hdl.handle.net/11536/3187
ISSN: 0018-9383
DOI: 10.1109/16.249423
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 40
Issue: 1
起始頁: 49
結束頁: 53
顯示於類別:期刊論文


文件中的檔案:

  1. A1993KC14400008.pdf