標題: Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFT's
作者: Yeh, CF
Chen, TJ
Liu, C
Shao, JQ
Cheung, NW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Nov-1998
摘要: This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFT's), Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H-2-diluted phosphorus pill can promote dopant activation more efficiently during RTA at 600 degrees C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFT's resemble those of conventional II doped ones.
URI: http://dx.doi.org/10.1109/55.728903
http://hdl.handle.net/11536/31804
ISSN: 0741-3106
DOI: 10.1109/55.728903
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 11
起始頁: 432
結束頁: 434
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